PART |
Description |
Maker |
K7R643684M K7R641884M |
2Mx36 & 4Mx18 QDRTM II b4 SRAM
|
Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD.
|
K7R643684M07 K7R641884M K7R641884M-FC200 K7R641884 |
2Mx36 & 4Mx18 QDR II b4 SRAM 4M X 18 QDR SRAM, 0.45 ns, PBGA165
|
Samsung semiconductor
|
GS8662S36GE-250I |
72Mb Burst of 2 DDR SigmaSIO-II SRAM 2M X 36 DDR SRAM, 0.45 ns, PBGA165
|
GSI Technology, Inc.
|
GS8662T18GE-267 |
72Mb SigmaCIO DDR-II Burst of 2 SRAM 4M X 18 DDR SRAM, 0.45 ns, PBGA165
|
GSI Technology, Inc.
|
GS8662R09E-167I GS8662R09GE-167I GS8662R18GE-333I |
72Mb SigmaCIO DDR-II Burst of 4 SRAM 8M X 9 DDR SRAM, 0.5 ns, PBGA165 72Mb SigmaCIO DDR-II Burst of 4 SRAM 4M X 18 DDR SRAM, 0.45 ns, PBGA165 72Mb SigmaCIO DDR-II Burst of 4 SRAM 8M X 9 DDR SRAM, 0.45 ns, PBGA165 72Mb SigmaCIO DDR-II Burst of 4 SRAM 2M X 36 DDR SRAM, 0.45 ns, PBGA165 72Mb SigmaCIO DDR-II Burst of 4 SRAM 8M X 8 DDR SRAM, 0.45 ns, PBGA165 72Mb SigmaCIO DDR-II Burst of 4 SRAM 8M X 8 DDR SRAM, 0.5 ns, PBGA165
|
GSI Technology, Inc.
|
K7R643682M07 K7R640982M K7R643682M-FI160 K7R643682 |
2Mx36 & 4Mx18 & 8Mx9 QDR II b2 SRAM 2M X 36 QDR SRAM, 0.5 ns, PBGA165 2M X 36 QDR SRAM, 0.45 ns, PBGA165
|
Samsung semiconductor
|
GS8640ZV18T-250I GS8640ZV18GT-167I GS8640ZV18T-300 |
72Mb NBT SRAMs 72Mb Pipelined and Flow Through Synchronous NBT SRAM
|
GSI[GSI Technology]
|
GS8640Z18T-V GS8640Z18T-250V GS8640Z18T-250IV |
72Mb Pipelined and Flow Through Synchronous NBT SRAM 72Mb流水线和流量,通过同步唑的SRAM 72Mb Pipelined and Flow Through Synchronous NBT SRAM 4M X 18 ZBT SRAM, 6.5 ns, PQFP100
|
GSI Technology, Inc.
|
CY7C1168V18-400BZXC CY7C1168V18-375BZXC CY7C1168V1 |
1M X 18 DDR SRAM, 0.45 ns, PBGA165 13 X 15 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165 18-Mbit DDR-II SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency) 1M X 18 DDR SRAM, 0.45 ns, PBGA165 2M X 8 DDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor, Corp. CYPRESS SEMICONDUCTOR CORP
|
GS8644V18B-166I GS8644V36E-225 GS8644V18E-150I |
4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs 4M X 18 CACHE SRAM, 7 ns, PBGA119 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs 2M X 36 CACHE SRAM, 6.5 ns, PBGA165 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs 4M X 18 CACHE SRAM, 7.5 ns, PBGA165
|
GSI Technology, Inc.
|
GS864118 GS864132 GS864136 |
72Mb Burst SRAMs
|
GSI Technology
|
HY5DU56822BT-D43 HY5DU56822BT-D4_D43 HY5DU56422BT- |
DDR SDRAM - 256Mb 256M-P DDR SDRAM IC,SDRAM,DDR,4X8MX8,CMOS,TSSOP,66PIN,PLASTIC
|
Hynix Semiconductor http://
|
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